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Preliminary data
HiPerF erFAST HiPerFASTTM IGBT
IXGH22N50B IXGH22N50BS
VCES IC(25) VCE(sat)typ tfi(typ)
TO-247 SMD*
= 500 V = 44 A = 2.1 V = 55 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 500 500 20 30 44 22 88 ICM = 44 A @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 AD TO-247 SMD 6 4 W C C C C Nm/lb.in. g g V V V V A A A
G C E
G E
C (TAB)
TO-247 AD
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features
* International standard packages
JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
* High frequency IGBT * High current handling capability * HiPerFAST HDMOS process * MOS Gate turn-on
TM TM
- drive simplicity Applications
* Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25C TJ = 125C 100 2.1 2.5 V V A mA nA V power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
* AC motor speed control * DC servo and robot drives * DC choppers
Advantages
5 200 1
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
* High power density * Very low switching losses for high
frequency applications
* Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
(c) 1996 IXYS All rights reserved
96532A(12/96)
IXGH22N50B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 16 1450 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 37 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 90 11 30 15 30 0.15 100 55 0.3 15 30 0.15 140 100 0.6 pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.83 K/W 0.25 K/W S
IXGH22N50BS
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
P
pF
e
Dim.
25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 Note 1 125 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 Note 1
150 110 0.5
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-247 SMD Outline
Note 1: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
Min. Recommended Footprint (Dimensions in inches and mm)
1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S 3. Emitter 4. Collector Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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